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| IPW60R045CP CoolMOSTM Power Transistor Features * Worldwide best R ds,on in TO247 * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V nC PG-TO247-3-1 CS CoolMOS is specially designed for: * Hard switching SMPS topologies Type IPW60R045CP Package PG-TO247-3-1 Ordering Code SP000067149 Marking 6R045 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 C T C=25 C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 60 38 230 1950 3 11 50 20 30 431 -55 ... 150 60 W C Ncm 2006-06-19 A V/ns V mJ Unit A IPW60R045CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 44 230 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.29 62 K/W T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I DSS V DS=V GS, I D=3 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=44 A, T j=25 C V GS=10 V, I D=44 A, T j=150 C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 10 A V - 50 0.04 100 0.045 nA - 0.11 1.3 Rev. 2.0 page 2 2006-06-19 IPW60R045CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=400 V, I F=I S, di F/dt =100 A/s V GS=0 V, I F=44 A, T j=25 C 0.9 600 17 60 1.2 V ns C A Q gs Q gd Qg V plateau V DD=400 V, I D=44 A, V GS=0 to 10 V 34 51 150 5.0 190 V nC C iss C oss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=44 A, R G=3.3 820 30 20 100 10 ns V GS=0 V, V DS=100 V, f =1 MHz 6800 320 310 pF Values typ. max. Unit 1) J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD<=ID, di/dt<=100A/s,VDClink = 400V, Vpeak 3) 4) 5) 6) Rev. 2.0 page 3 2006-06-19 IPW60R045CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 500 103 limited by on-state resistance 400 1 s 10 s 102 300 100 s P tot [W] I D [A] 1 ms 200 101 DC 10 ms 100 0 0 40 80 120 160 100 100 101 102 103 T C [C] V DS [V] 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 250 20 V 10 V 8 V 3 Max. transient thermal impedance Z(thJC)=f(tp) parameter: D=t p/T 100 7V 200 0.5 10-1 0.2 Z thJC [K/W] 150 I D [A] 0.1 0.05 0.02 6V 100 5.5 V 10 -2 0.01 single pulse 50 5V 4.5 V 10-3 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.0 page 4 2006-06-19 IPW60R045CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 140 8V 7V 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 0.16 5V 5.5 V 6V 20 V 6V 6.5 V 120 10 V 100 5.5 V 0.12 7V R DS(on) [] 80 20 V I D [A] 0.08 60 5V 40 4.5 V 0.04 20 0 0 5 10 15 20 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=44 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 0.12 320 C 25 280 0.1 240 0.08 200 R DS(on) [] 0.06 98 % typ I D [A] 160 C 150 120 0.04 80 0.02 40 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.0 page 5 2006-06-19 IPW60R045CP 9 Typ. gate charge V GS=f(Q gate); I D=44 A pulsed parameter: V DD 10 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 8 120 V 400 V 102 150 C 25 C 150 C, 98% 6 V GS [V] 4 101 I F [A] 25 C, 98% 2 0 0 50 100 150 100 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=11 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 2000 700 1500 660 1000 V BR(DSS) [V] 20 60 100 140 180 E AS [mJ] 620 500 580 0 540 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.0 page 6 2006-06-19 IPW60R045CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 50 104 Ciss 40 Coss 102 E oss [J] 20 10 0 200 300 400 500 103 30 C [pF] 101 Crss 100 0 100 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.0 page 7 2006-06-19 IPW60R045CP Definition of diode switching characteristics Rev. 2.0 page 8 2006-06-19 IPW60R045CP PG-TO-247-3-1: Outlines Dimensions in mm/inches: Rev. 2.0 page 9 2006-06-19 IPW60R045CP Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2006-06-19 |
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